Taiwan Semi launches AEC-Q qualified 1200V SiC Schottky diodes

The TSCDFS01120G2H and TSCDFS02120G2H from Taiwan Semiconductor are automotive-grade 1200 V SiC Schottky diodes in SOD-128 packages, available in 1 A and 2 A versions with a maximum forward voltage of 1.5 V and junction temperatures up to 175°C. The diodes are intended for applications including auxiliary power supplies, bias rectification, bootstrapping circuits, gate driver bias supplies, snubbers, bleeder clamp paths, PFC boost stages in low-power designs and secondary rectification in high-frequency flybacks. Both devices are AEC-Q qualified and available with PPAP certification.