Vishay Intertechnology, Inc. has introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for isolated and non-isolated topologies.
Offered in the 3.3 by 3.3mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best-in-class, on-resistance of 0.95 mΩ at 10 V, a five percent improvement over the previous generation product.
In addition, the device delivers on-resistance of 1.5 mΩ at 4.5 V, while its 29.8 mΩ*nC on-resistance times gate charge at 4.5 V — a critical figure of merit (FOM) for MOSFETs used in switching applications — is one of the lowest on the market.
The SiSS52DN’s FOM represents a 29 percent improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
The SiSS52DN is ideal for low-side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.
The device is 100 percent RG– and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities of the SiSS52DN are available now, with lead times of 12 weeks.
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