Infineon’s new HYPERRAM memory chip doubles bandwidth

Infineon Technologies has added HYPERRAM 3.0 to its portfolio of high-bandwidth, low-pin count memory solutions. The device features a new,16-bit extended version of the HyperBus interface that doubles throughput to 800 MBps.

With HYPERRAM 3.0, Infineon offers a portfolio of high-bandwidth memories with low pin count and low power. It’s an ideal fit for applications requiring expansion RAM memory, including video buffering, factory automation, the artificial intelligence of things (AIoT) and automotive vehicle-to-everything (V2X), as well as applications requiring scratch-pad memory for intense mathematical calculations.

“With nearly three decades of memory solutions knowledge, we are excited to bring another industry-first to the market. The new HYPERRAM 3.0 memory solutions achieve a far higher throughput-per-pin than existing technologies in the market such as PSRAMs and SDR DRAMs,” said Ramesh Chettuvetty, senior director of Applications and Marketing at Infineon’s Automotive Division. “Our low-power features enable better power consumption, without sacrificing throughput, which also makes this memory ideal for industrial and IoT solutions.”

Infineon’s HYPERRAM is a stand-alone PSRAM-based volatile memory that offers a simple and cost-optimized way to add extension memory. The data rates are equivalent to SDR DRAM but with much lower pin-count and lower power requirements. The increased per-pin data throughput of the HyperBus interface makes it possible to use microcontrollers (MCUs) with fewer pins and PCBs with fewer layers.

This provides opportunities for lower-complexity and thus cost-optimized designs to support target applications.