Navitas Semiconductor has introduced the G4H08MT23GB4 2300 V full-bridge SiC power module family in the SiCPAK™ form factor, with an 8 mΩ RDS(ON), an aluminum nitride active-metal-braze substrate and isolation above 5 kV. The modules use fourth-generation GeneSiC™ Trench-Assisted Planar™ architecture for solid-state transformers, grid-scale battery energy storage systems, solar inverters and EV megawatt charging infrastructure, with optional high-current press-fit pins and pre-applied thermal interface material.
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Filed Under: Applications, News, Power Management, Renewable Energy
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