Nexperia, an expert in essential semiconductors, announced that the first products to be made in the company’s new eight-inch wafer line in Manchester, UK, will be low R_DS(on), low Q_rr 80 V and 100 V MOSFETs — using its latest NextPower silicon technology.

The new production line expands Nexperia’s capacity. Plus, the new PSMN3R9-100YSF (100 V) and PSMN3R5-80YSF (80 V) devices will feature industry’s lowest Q_rr Figure of Merit (R_DS(on) x Q_rr).

“With the global shortage of semiconductors, the investments made by Nexperia to increase capacity across its global manufacturing sites, including Manchester & the Philippines where these MOSFETs are produced, will be very welcome news to buyers,” said Mike Becker, Nexperia’s product manager. “Designers will also be excited by the performance of the new MOSFETs.”

The NextPower 80 and 100 V silicon MOSFETs significantly improve R_DS(on) from 7 mΩ for previous generation 100 V parts down to just 4.3 mΩ for the new devices, resulting in increased efficiency.

The NextPower technology also delivers best-in-class low Q_rr of 44 nC for the 100 V part, which reduces spiking and EMI emissions. Overall, the Q_rr Figure of Merit for the 100 V part is 61 percent lower on average than competitive devices.

“They are very well suited for many switching applications and are a genuine second source options to other vendors’ products,” added Becker.

The new 80 and 100 V MOSFETs are available in Nexperia’s thermally and electrically high-performance LFPAK56E copper-clip technology package. Devices are suitable for a wide range of switching applications, including AC/DC, DC/DC and motor control.