STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction, multi-drain, silicon-power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions.
The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has the best maximum RDS(on) (RDS(on)max) in its category, at 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9.
With an extremely low gate charge (Qg) — typically 80nC at 400V drain voltage — these devices have the best RDS(on)max x Qg figure of merit (FoM) currently available.
The gate-threshold voltage (VGS(th)) — typically 3.7V for the STP65N045M9 and 4.0V for STP60N043DM9 — minimizes the turn-on and turn-off switching losses compared with the earlier MDmesh M5 and M6/DM6. The MDmesh M9 and DM9 series also feature a very low reverse recovery charge (Qrr) and reverse recovery time (trr), which further contribute to improved efficiency and switching performance.
A further feature of ST’s latest high-voltage MDmesh technologies is an additional platinum diffusion process that ensures a fast intrinsic body diode. The peak diode-recovery slope (dv/dt) is greater than for earlier processes.
All devices belonging to MDmesh DM9 technology are extremely rugged and can withstand dv/dt up to 120V/ns at 400V.
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